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MSG43001 - Transistor

Key Features

  • s.
  • Compatible between high breakdown voltage and high cutoff frequency.
  • Low-noise, high-gain amplification.
  • Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package 0.6 mm × 1.0 mm (height 0.39 mm) Unit: mm 1 1.00±0.05 0.60±0.05 3 2 0.39+0.01.
  • 0.03 0.15±0.05 0.05±0.03 0.35±0.01 0.25±0.05 0.50±0.05 0.25±0.05 1.
  • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-e.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors MSG43001 SiGe HBT type For low-noise RF amplifier ■ Features • Compatible between high breakdown voltage and high cutoff frequency • Low-noise, high-gain amplification • Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package 0.6 mm × 1.0 mm (height 0.39 mm) Unit: mm 1 1.00±0.05 0.60±0.05 3 2 0.39+0.01 −0.03 0.15±0.05 0.05±0.03 0.35±0.01 0.25±0.05 0.50±0.05 0.25±0.05 1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation* Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 9 6 1 30 100 125 −55 to +125 Unit V V V mA mW °C °C 3 0.65±0.