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MSG36E41 - SiGe HBT type

Key Features

  • s.
  • Compatible between high breakdown voltage and high cut-off frequency.
  • Low noise, high-gain amplification.
  • Two elements incorporated into one package (Each transistor is separated).
  • Reduction of the mounting area and assembly cost by one half 0.12+0.03 -0.02 6 5 4 Unit: mm 0.80±0.05 1.00±0.04 0 to 0.02.
  • MSG33004 + MSG33001 (0.35) (0.35) 1.00±0.05.
  • Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Collector-base voltage (Emitter open) Coll.

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Transistors MSG36E41 SiGe HBT type For low-noise RF amplifier ■ Features • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Two elements incorporated into one package (Each transistor is separated) • Reduction of the mounting area and assembly cost by one half 0.12+0.03 -0.02 6 5 4 Unit: mm 0.80±0.05 1.00±0.04 0 to 0.02 • MSG33004 + MSG33001 (0.35) (0.35) 1.00±0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Tr2 www.DataSheet4U.com Display at No.