Datasheet Summary
Transistors
SiGe HBT type
For low-noise RF amplifier
- Features
- patible between high breakdown voltage and high cut-off frequency
- Low noise, high-gain amplification
- Two elements incorporated into one package (Each transistor is separated)
- Reduction of the mounting area and assembly cost by one half
0.12+0.03 -0.02 6 5 4
Unit: mm
0.80±0.05
1.00±0.04
0 to 0.02
- MSG33004 + MSG33001
(0.35) (0.35) 1.00±0.05
-...