MSG36E41 - SiGe HBT type

Panasonic Semiconductor

Datasheet Details

Part number	MSG36E41
Manufacturer	Panasonic Semiconductor
File Size	165.91 KB
Description	SiGe HBT type
Datasheet	MSG36E41_PanasonicSemiconductor.pdf

s.
Compatible between high breakdown voltage and high cut-off frequency.
Low noise, high-gain amplification.
Two elements incorporated into one package (Each transistor is separated).
Reduction of the mounting area and assembly cost by one half 0.12+0.03 -0.02 6 5 4 Unit: mm 0.80±0.05 1.00±0.04 0 to 0.02.
MSG33004 + MSG33001 (0.35) (0.35) 1.00±0.05.
Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Collector-base voltage (Emitter open) Coll.

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Published: Jul 16, 2007 |