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PNZ109L Silicon NPN Phototransistor

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Description

Phototransistors PNZ109L Silicon NPN Phototransistor ø4.6±0.15 Unit : mm Glass lens For optical control systems .

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Datasheet Specifications

Part number
PNZ109L
Manufacturer
Panasonic Semiconductor
File Size
46.18 KB
Datasheet
PNZ109L_PanasonicSemiconductor.pdf
Description
Silicon NPN Phototransistor

Features

* High sensitivity : ICE(L) = 3.5 mA (min. ) (at L = 100 lx) 12.7 min. 6.3±0.3 Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting devices : λp = 900 nm (typ. ) Fast response : tr = 5 µs (typ. ) Long lifetime, high rel

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