XP1215 Datasheet, Transistor, Panasonic Semiconductor

XP1215 Features

• Transistor q q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.0±0.1 1 2 3 5 0

PDF File Details

Part number:

XP1215

Manufacturer:

Panasonic Semiconductor

File Size:

32.72kb

Download:

📄 Datasheet

Description:

Silicon npn epitaxial planer transistor.

TAGS

📁 Related Datasheet

XP1210 - Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
Composite Transistors XP1210 Silicon NPN epitaxial planer transistor Unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.2±0.05 0.12 – 0.02 +0.05 For switching/.

XP1211 - Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
Composite Transistors XP1211 Silicon NPN epitaxial planer transistor Unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.2±0.05 0.12 – 0.02 +0.05 For switching/.

XP1212 - Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
Composite Transistors XP1212 Silicon NPN epitaxial planer transistor Unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.2±0.05 0.12 – 0.02 +0.05 For switching/.

XP1213 - Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
Composite Transistors XP1213 Silicon NPN epitaxial planer transistor Unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.2±0.05 0.12 – 0.02 +0.05 For switching/.

XP1214 - Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
.

XP1216 - Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
Composite Transistors XP1216 Silicon NPN epitaxial planer transistor Unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.2±0.05 0.12 – 0.02 +0.05 For switching/.

XP1217 - Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
Composite Transistors XP1217 Silicon NPN epitaxial planer transistor Unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.2±0.05 0.12 – 0.02 +0.05 For switching/.

XP1000 - GaAs MMIC Power Amplifier (Mimix Broadband)
17.0-24.0 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 P1000 Chip Device Layout Features High Linearity Output Amplifier Balanced Design P.

XP1000-BD - GaAs MMIC Power Amplifier (Mimix Broadband)
17.0-24.0 GHz GaAs MMIC Power Amplifier May 2007 - Rev 02-May-07 P1000-BD Chip Device Layout Features High Linearity Output Amplifier Balanced Desig.

XP1001 - GaAs MMIC Power Amplifier (Mimix Broadband)
26.0-40.0 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 P1001 Chip Device Layout Features High Linearity Wideband Amplifier On-Chip Tempera.