2SB1169A Description
Power Transistors 2SB1169, 2SB1169A Silicon PNP epitaxial planar type For power amplification Unit : mm * .
2SB1169A Features
* High forward current transfer ratio hFE which has satisfactory linearity
* Low collector-emitter saturation voltage VCE(sat)
* I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 7.0±0.3 3.0±0.2 2.
2SB1169A Applications
* or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications:
* Special applications (such as for airplanes, aerospace, automobiles, traff
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