Part number:
2SB1169A
Manufacturer:
Panasonic
File Size:
93.98 KB
Description:
Power transistors.
* High forward current transfer ratio hFE which has satisfactory linearity
* Low collector-emitter saturation voltage VCE(sat)
* I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 7.0±0.3 3.0±0.2 2.
2SB1169A
Panasonic
93.98 KB
Power transistors.
📁 Related Datasheet
2SB1169 - Power Transistors
(Panasonic)
Power Transistors
2SB1169, 2SB1169A
Silicon PNP epitaxial planar type
For power amplification
Unit : mm
■ Features
• High forward current transfer r.
2SB1169A - Transistors
(Kexin)
SMD Type
Silicon PNP Epitaxial Planar Type 2SB1169A
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
High forward.
2SB1160 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1160
DESCRIPTION ·With TO-3PFa package ·Compleme.
2SB1160 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
2SB1160
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Wide Area .
2SB1161 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1161
DESCRIPTION ·With TO-3PFa package ·Compleme.
2SB1161 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
2SB1161
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·Wide Area .
2SB1162 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1162
DESCRIPTION ·With TO-3PL package ·Complemen.
2SB1162 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
2SB1162
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·Wide Area .
