Part number:
2SK1846
Manufacturer:
Panasonic
File Size:
44.40 KB
Description:
Silicon n-channel power f-mos fet.
* q Avalanche energy capacity guaranteed: EAS > 20mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply s Absolute Maximum Rat
2SK1846
Panasonic
44.40 KB
Silicon n-channel power f-mos fet.
📁 Related Datasheet
2SK184 - N-Channel Silicon MOSFET
(Toshiba Semiconductor)
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK184
2SK184
Low Noise Audio Amplifier Applications
Unit: mm
· High |Yfs|: |Yfs| .
2SK1840 - N-Channel Enhancement Silicon MOSFET
(Sanyo Semicon Device)
Ordering number:EN4635
N-Channel Enhancement Silicon MOSFET
2SK1840
Analog Switch Applications
Features
· Largeyfs. · Enhancement type.
· Low ON r.
2SK1841 - N-Channel Enhancement Silicon MOSFET
(Sanyo Semicon Device)
Ordering number:EN4636
N-Channel Enhancement Silicon MOSFET
2SK1841
Ultrahigh-Speed Switching, Analog Switch Applications
Features
· Largeyfs. · E.
2SK1842 - Silicon N-Channel Junction FET
(Panasonic Semiconductor)
Silicon Junction FETs (Small Signal)
2SK1842
Silicon N-Channel Junction FET
For impedance conversion in low frequency For infrared sensor
0.65±0.15
+.
2SK1847 - N-Channel Silicon MOSFET
(Sanyo Semicon Device)
Ordering number:EN4505
N-Channel Silicon MOSFET
2SK1847
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed switc.
2SK1848 - N-Channel Silicon MOSFET
(Sanyo Semicon Device)
Ordering number:EN4500
N-Channel Silicon MOSFET
2SK1848
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed switc.
2SK1849 - N-Channel Silicon MOSFET
(Sanyo Semicon Device)
Ordering number:EN4501
N-Channel Silicon MOSFET
2SK1849
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed switc.
2SK18 - Silicon N-Channel Transistor
(Toshiba)
:
SILICON N CHANNEL JUNCTION DUAL TYPE (COMPLETELY SEPARATED TYPE)
DIFFERENTIAL AMPLIFIER APPLICATIONS. FEATURES
• Low Offset : VgS1 VgS2 =10mV (Max.).
