Part number:
2SK1803
Manufacturer:
Panasonic
File Size:
46.41 KB
Description:
Silicon n-channel mosfet.
* q Avalanche capacity guaranteed: EAS > 60mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 80ns q No secondary breakdown s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply s Absolute Maximum Ratings (T
2SK1803
Panasonic
46.41 KB
Silicon n-channel mosfet.
📁 Related Datasheet
2SK180 - Power FET
(Yoshino International)
..
..
..
..
.
2SK1803 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot.
2SK1805 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
2SK1805
DESCRIPTION ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage
: VDSS= 500V(Min) ·Fast Switching Speed ·Min.
2SK1805 - Field Effect Transistor
(Toshiba)
..
..
..
..
..
.
2SK1807 - N-Channel MOSFET
(Hitachi Semiconductor)
2SK1807
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current.
2SK1807 - Silicon N-Channel MOSFET
(Renesas)
2SK1807
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • No .
2SK1807 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
2SK1807
DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage
: VDSS= 900V(Min) ·Fast Switching Speed ·Min.
2SK1808 - N-Channel MOSFET
(Hitachi Semiconductor)
2SK1808
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current.
