* q Avalanche energy capability guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown s Applications q Non-contact relay q Solenoid drive q Motor drive q Control equipment q Switching mode regulator s Absolute Maximum Ratings (Tc = 25˚C) Parameter Drain-Source breakdown vo
2SK2210
Panasonic
157.93 KB
Silicon n-channel power f-mos.
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📁 Related Datasheet
2SK2211 - Silicon N-Channel MOS FET
(Panasonic Semiconductor)
Silicon MOS FETs (Small Signal)
2SK2211
Silicon N-Channel MOS FET
Unit : mm
For switching
2.6±0.1
4.5±0.1 1.6±0.2
1.5±0.1
• Low ON-resistance RDS.
2SK2212 - Silicon N-Channel MOS FET
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2SK2212
Silicon N-Channel MOS FET
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High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current.
2SK2213-01L - N-channel MOS-FET
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2SK2213-01L,S
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara.
2SK2213-01S - N-channel MOS-FET
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High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara.
2SK2215-01L - N-channel MOS-FET
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> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara.
2SK2215-01S - N-channel MOS-FET
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High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara.
2SK2216 - Silicon N-Channel MOS FET
(Hitachi Semiconductor)
2SK2216
Silicon N-Channel MOS FET
ADE-208-346A 2nd. Edition
Application
UHF power amplifier
Features
• High power output, high gain, high efficienc.
2SK2218 - N-Channel Junction Silicon FET
(Sanyo Semicon Device)
Ordering number:ENN5202
N-Channel Junction Silicon FET
2SK2218
High-Frequency Low-Noise Amplifier Applications
Features
· Adoption of FBET process. .
