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2SK2216 Silicon N-Channel MOS FET

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Description

2SK2216 Silicon N-Channel MOS FET ADE-208-346A 2nd.Edition Application UHF power amplifier .

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Datasheet Specifications

Part number
2SK2216
Manufacturer
Hitachi Semiconductor
File Size
47.53 KB
Datasheet
2SK2216_HitachiSemiconductor.pdf
Description
Silicon N-Channel MOS FET

Features

* High power output, high gain, high efficiency PG = 9.7 dB, Pout = 140 W, ηD = 55% typ (f = 860 MHz)
* Compact package Suitable for push - pull circuit Outline 2SK2216 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Channel di

Applications

* based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropr

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