Datasheet4U Logo Datasheet4U.com

2SK2216

Silicon N-Channel MOS FET

2SK2216 Features

* High power output, high gain, high efficiency PG = 9.7 dB, Pout = 140 W, ηD = 55% typ (f = 860 MHz)

* Compact package Suitable for push - pull circuit Outline 2SK2216 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Channel di

2SK2216 Datasheet (47.53 KB)

Preview of 2SK2216 PDF

Datasheet Details

Part number:

2SK2216

Manufacturer:

Hitachi Semiconductor

File Size:

47.53 KB

Description:

Silicon n-channel mos fet.

📁 Related Datasheet

2SK2210 - Silicon N-Channel Power F-MOS (Panasonic)
Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ieltticnnaytnmocalp.eujaniuesepctn.

2SK2211 - Silicon N-Channel MOS FET (Panasonic Semiconductor)
Silicon MOS FETs (Small Signal) 2SK2211 Silicon N-Channel MOS FET Unit : mm For switching 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0.1 • Low ON-resistance RDS.

2SK2212 - Silicon N-Channel MOS FET (Hitachi Semiconductor)
2SK2212 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current.

2SK2213-01L - N-channel MOS-FET (Fuji Electric)
2SK2213-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara.

2SK2213-01S - N-channel MOS-FET (Fuji Electric)
2SK2213-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara.

2SK2215-01L - N-channel MOS-FET (Fuji Electric)
2SK2215-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara.

2SK2215-01S - N-channel MOS-FET (Fuji Electric)
2SK2215-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara.

2SK2218 - N-Channel Junction Silicon FET (Sanyo Semicon Device)
Ordering number:ENN5202 N-Channel Junction Silicon FET 2SK2218 High-Frequency Low-Noise Amplifier Applications Features · Adoption of FBET process. .

TAGS

2SK2216 Silicon N-Channel MOS FET Hitachi Semiconductor

Image Gallery

2SK2216 Datasheet Preview Page 2 2SK2216 Datasheet Preview Page 3

2SK2216 Distributor