2SK2211 Datasheet PDF - Panasonic Semiconductor Silicon N-Channel MOS FET Specs

2SK2211 - Silicon N-Channel MOS FET

Datasheet Summary

Features

0.4 max. 1 2SK2211 ID  VDS 3.0 Ta = 25°C 2.5 2.5 3.0 Silicon MOS FETs (Small Signal) ID  VDS 1.6 RDS  VDS Drain to source ON-resistance RDS(ON) (Ω) VDS =10 V Ta = 25°C 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 ID = 0.5 A Ta = 25°C Drain current ID (A) 2.0 Drain current ID (A) VGS = 3.5 V 2.0 1.5 3.0 V 1.0 2.5 V 0.5 2.0 V 0 0 2 4 6 8 10 12 1.5 1.0 0.5 0 0 1 2 3 4 5 6 0 2 4 6 8 10 12 Drain to source voltage VDS (V) Gate to source voltage VGS (V) Gate to source voltage VGS (V) RDS.

Datasheet Details

Part number	2SK2211
Manufacturer	Panasonic Semiconductor
File Size	33.22 KB
Description	Silicon N-Channel MOS FET
Datasheet	2SK2211 Datasheet
Additional preview pages of the 2SK2211 datasheet.

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Full PDF Text Transcription

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Silicon MOS FETs (Small Signal) 2SK2211 Silicon N-Channel MOS FET Unit : mm For switching 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0.1 • Low ON-resistance RDS(ON) • High-speed switching • Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 45˚ 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 4.0+0.25 –0.20 0.4±0.

Published: Mar 30, 2005 |