2SK2211 Datasheet - Panasonic Semiconductor

2SK2211 Silicon N-Channel MOS FET

Silicon MOS FETs (Small Signal) 2SK2211 Silicon N-Channel MOS FET Unit : mm For switching 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0.1 Low ON-resistance RDS(ON) High-speed switching Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 45˚ 1.0 0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 4.0+0.25 0.20 0.4±0.04 s Absolute Maximum Ratings Ta = 25°C Parameter Drain to Source voltage Gate to So.

2SK2211 Features

* 0.4 max. 1 2SK2211 ID  VDS 3.0 Ta = 25°C 2.5 2.5 3.0 Silicon MOS FETs (Small Signal) ID  VDS 1.6 RDS  VDS Drain to source ON-resistance RDS(ON) (Ω) VDS =10 V Ta = 25°C 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 ID = 0.5 A Ta = 25°C Drain current ID (A) 2.0 Drain current ID (A) VGS = 3.5 V 2.0 1.5 3

2SK2211_PanasonicSemiconductor.pdf