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2SK2218 - N-Channel Junction Silicon FET

Key Features

  • Adoption of FBET process.
  • Amateur radio equipment.
  • UHF amplifiers, MIX, OSC, analog switches.
  • Large | yfs |.
  • Small Ciss. Package Dimensions unit:mm 2125 [2SK2218] 4.5 1.6 1.5 1.0 2.5 4.25max Specifications 0.4 0.5 32 1.5 3.0 1 0.75 0.4 1 : Source 2 : Gate 3 : Drain SANYO : PCP (Bottom View) Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Symbol VDSX VGDS IG ID Allowable Power Dissi.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SK2219 N-Channel Junction Silicon FET
2SK222 N-Channel Junction Silicon FET
2SK223 N-Channel Junction Silicon FET
2SK2260 N-Channel Silicon MOSFET
2SK2273 N-Channel Silicon MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN5202 N-Channel Junction Silicon FET 2SK2218 High-Frequency Low-Noise Amplifier Applications Features · Adoption of FBET process. · Amateur radio equipment. · UHF amplifiers, MIX, OSC, analog switches. · Large | yfs |. · Small Ciss. Package Dimensions unit:mm 2125 [2SK2218] 4.5 1.6 1.5 1.0 2.5 4.25max Specifications 0.4 0.5 32 1.5 3.0 1 0.75 0.4 1 : Source 2 : Gate 3 : Drain SANYO : PCP (Bottom View) Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Symbol VDSX VGDS IG ID Allowable Power Dissipation PD Junction Temperature Storage Temperature Tj Tstg Conditions Mounted on ceramic board (250mm2× 0.