Datasheet Summary
Power F-MOS FETs
Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 100mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown unit: mm
4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Applications
4.1±0.2 8.0±0.2 Solder Dip
13.7- 0.2 q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
15.0±0.3
3.0±0.2
+0.5
1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 1 2 3
2.6±0.1 0.7±0.1 s...