Part number:
2SK2220
Manufacturer:
Hitachi Semiconductor
File Size:
39.84 KB
Description:
Silicon n-channel mosfet.
* High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Outline TO-3P D G 1 2 3 1. Gate 2. Source (F
2SK2220
Hitachi Semiconductor
39.84 KB
Silicon n-channel mosfet.
📁 Related Datasheet
2SK222 - N-Channel Junction Silicon FET
(Sanyo Semicon Device)
Ordering number:EN836G
N-Channel Junction Silicon FET
2SK222
Low-Frequency, Low Noise Amplifier Applications
Features
· Ultralow noise figure. · Lar.
2SK2220 - Silicon N-Channel MOSFET
(Renesas)
2SK2220, 2SK2221
Silicon N Channel MOS FET
Application
Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352
Features
• High power gain.
2SK2221 - Silicon N-Channel MOSFET
(Hitachi Semiconductor)
2SK2220, 2SK2221
Silicon N-Channel MOS FET
Application
Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352
Features
• • • • • • • H.
2SK2221 - Silicon N-Channel MOSFET
(Renesas)
2SK2220, 2SK2221
Silicon N Channel MOS FET
Application
Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352
Features
• High power gain.
2SK2221 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
2SK2221
·FEATURES ·Drain Current ID= 8A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Sta.
2SK2222 - N-Channel Transistor
(ETC)
.
2SK2223-01 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
2SK2223-01
DESCRIPTION ·Drain Current ID=10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Fast Switching Speed .
2SK2223-01R - N-channel MOS-FET
(Fuji Electric)
2SK2223-01R
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarant.
