Part number:
2SK222
Manufacturer:
Sanyo Semicon Device
File Size:
80.20 KB
Description:
N-channel junction silicon fet.
* Ultralow noise figure.
* Large yfs.
* Low gate leakage current. Package Dimensions unit:mm 2019B [2SK222] 5.0 4.0 4.0 0.6 2.0 14.0 5.0 0.45 0.5 0.45 0.44 Specifications 123 1.3 1.3 1 : Source 2 : Gate 3 : Drain SANYO : NP JEDEC : TO-92 EIAJ : SC-43 Absolute Maximum Ratings at
2SK222
Sanyo Semicon Device
80.20 KB
N-channel junction silicon fet.
📁 Related Datasheet
2SK2200 - Silicon N Channel MOS Type Field Effect Transistor
(Toshiba Semiconductor)
2SK2200
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2200
Chopper Regulator, DC−DC Converter and Motor Drive Application.
2SK2201 - Silicon N-Channel MOS Type Field Effect Transistor
(Toshiba Semiconductor)
2SK2201
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L2−π−MOSV)
2SK2201
Chopper Regulator, DC/DC Converter and Motor Drive Application.
2SK2202 - Silicon N-Channel MOS FET
(Hitachi Semiconductor)
2SK2202
Silicon N-Channel MOS FET
ADE-208-089 A 2nd. Edition
Application
High speed power switching
Features
• • • • • Low on-resistance High speed.
2SK2203 - Silicon N-Channel MOS FET
(Hitachi Semiconductor)
2SK2203
Silicon N-Channel MOS FET
ADE-208-139 1st. Edition
Application
High speed power switching
Features
• • • • • Low on-resistance High speed s.
2SK2207 - MOSFET
(Sanken electric)
2SK2207
Absolute Maximum Ratings
Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 900 ± 30 ±3 ± 12 35 (Tc = 25ºC) 280 3 150 –55 to +1.
2SK2208 - MOSFET
(Sanken electric)
2SK2208
Absolute Maximum Ratings
Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 900 ± 30 ±5 ± 20 75 (Tc = 25ºC) 400 5 150 –55 to +1.
2SK2209-01R - Power MOSFET
(Fuji Electric)
.
2SK2210 - Silicon N-Channel Power F-MOS
(Panasonic)
Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ieltticnnaytnmocalp.eujaniuesepctn.