Datasheet4U Logo Datasheet4U.com

2SK223 Datasheet - Sanyo Semicon Device

N-Channel Junction Silicon FET

2SK223 Features

* Ultrahigh withstand voltage (VGDS≥

* 80V).

* Due to low gate leakage currents even at high voltage, the 2SK223 is suitable for a wide range of application (IGDL=1nA/VDS=50V, ID=1mA).

* High yfs(yfs=20mS/VDS=30V, f=1kHz). Package Dimensions unit:mm 2019B [2SK223] 5.0 4.0 4.0

2SK223 Datasheet (98.53 KB)

Preview of 2SK223 PDF

Datasheet Details

Part number:

2SK223

Manufacturer:

Sanyo Semicon Device

File Size:

98.53 KB

Description:

N-channel junction silicon fet.

📁 Related Datasheet

2SK2200 Silicon N Channel MOS Type Field Effect Transistor (Toshiba Semiconductor)

2SK2201 Silicon N-Channel MOS Type Field Effect Transistor (Toshiba Semiconductor)

2SK2202 Silicon N-Channel MOS FET (Hitachi Semiconductor)

2SK2203 Silicon N-Channel MOS FET (Hitachi Semiconductor)

2SK2207 MOSFET (Sanken electric)

2SK2208 MOSFET (Sanken electric)

2SK2209-01R Power MOSFET (Fuji Electric)

2SK2210 Silicon N-Channel Power F-MOS (Panasonic)

2SK2211 Silicon N-Channel MOS FET (Panasonic Semiconductor)

2SK2212 Silicon N-Channel MOS FET (Hitachi Semiconductor)

TAGS

2SK223 N-Channel Junction Silicon FET Sanyo Semicon Device

Image Gallery

2SK223 Datasheet Preview Page 2 2SK223 Datasheet Preview Page 3

2SK223 Distributor