2SK223 Datasheet - Sanyo Semicon Device

2SK223 N-Channel Junction Silicon FET

2SK223 Features

* Ultrahigh withstand voltage (VGDS≥

* 80V).

* Due to low gate leakage currents even at high voltage, the 2SK223 is suitable for a wide range of application (IGDL=1nA/VDS=50V, ID=1mA).

* High yfs(yfs=20mS/VDS=30V, f=1kHz). Package Dimensions unit:mm 2019B [2SK223] 5.0 4.0 4.0

Datasheet Details

2SK223

Sanyo Semicon Device

98.53 KB

N-channel junction silicon fet.

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