AQY412EH - Photo MOS Relay

Panasonic

Datasheet Details

1. 1 Form B output type 2. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method. Cross section of the normally-closed type of power MOS Passivation membrane Source electrode Gate electrode Intermediate insulating membrane N+ P+ N+ N+ P+ N+ Gate oxidation membrane N.
N+ Drain electrode 3. Reinforced insulation of 5,000 V More than 0.4 mm internal insulation distance between i.

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Published: Feb 9, 2018 |