* 1. 1 Form B output type 2. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method. Cross section of the normally-closed type of power MOS Passivation membrane Source electrode Gate electrode Int
AQY414EH Datasheet (149.33 KB)
AQY414EH
Panasonic
149.33 KB
Photo mos relay.
Normally closed type with reinforced insulation
(AQY410EH, 414EH) (AQY412EH)
GE 1 Form B
(AQY41❍EH)
4.78 .188
6.4
.252 3.2 .126
4.78 .188
(Heigh.
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