C5546 - Silicon NPN Transistor

Panasonic

Datasheet Details

s 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5.
High breakdown voltage, and high reliability through the use of a glass passivation layer.
High-speed switching.
Wide safe operation area 5˚ (4.0) 5˚ 2.0±0.2 5˚.
Absolute Maximum Ratings TC = 25°C 1.1±0.1 0.7±0.1 / Parameter Symbol Rating Unit 18.6±0.5 (2.0) Solder Dip 5.45±0.3 e ) Collector-base voltage (Emitter open) VCBO 1 700 V c type Collector-emitte.

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Published: Mar 2, 2021 |