* High breakdown voltage, and high reliability through the use of a glass passivation layer
* High-speed switching
* Wide area of safe operation (ASO) 5˚ (4.0) 5˚ 2.0±0.2 5˚ / 1.1±0.1 0.7±0.1 I Absolute Maximum Ratings TC = 25°C 5.45±0.3 e ) Parameter Symbol Rati
C5517
Panasonic
200.68 KB
Silicon npn transistor.
Power Transistors 2SC5517 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 φ 3.2±0.1 Unit: mm 3.0±0.3 5˚ 5˚ (4.5).
📁 Related Datasheet
C5511 2SC5511 (Rohm)
C5516 2SC5516 (Panasonic)
C551E C-551E (Para Light Electronics)
C5502 2SC5502 (Sanyo)
C5505 2SC5505 (Panasonic)
C5508 NPN SILICON RF TRANSISTOR (UTC)
C5508 2SC5508 (NEC)
C5508 NPN SILICON RF TRANSISTOR (Renesas)
C5521 2SC5521 (Panasonic)
C5522 30 dB Dual Directional Coupler (Werlatone)
