FC8J3304 - Silicon N-channel MOS FET
(Panasonic)
This product plies with the RoHS Directive (EU 2002/95/EC).
FC8J3304
Silicon N-channel MOS FET
For DC-DC converter circuits
Overview FC8J3304 .
FC801 - Composite Diode for High-Speed Switching Applications
(Sanyo Semicon Device)
Ordering number :EN3107A
FC801
Silicon Epitaxal Planar Diode
Composite Diode for High-Speed Switching Applications
Features
· Composite type with 4 .
FC802 - Composite Diode for High-Speed Switching Applications
(Sanyo Semicon Device)
Ordering number :EN3108B
FC802
Silicon Epitaxal Planar Diode
Composite Diode for High-Speed Switching Applications
Features
· Composite type with 4 .
FC803 - 30V/ 70mA Rectifier
(Sanyo Semicon Device)
Ordering number :EN3193A
FC803
Silicon Schottky Barrier Diode
30V, 70mA Rectifier
Features
· Low forward voltage (VF max=0.55V) . · Fast reverse rec.
FC804 - 30V/ 200mA Rectifier
(Sanyo Semicon Device)
Ordering number :EN3194A
FC804
Silicon Schottky Barrier Diode
30V, 200mA Rectifier
Features
· Low forward voltage (VF max=0.55V) . · Fast reverse re.
FC805 - 30V/ 500mA Rectifier
(Sanyo Semicon Device)
Ordering number :EN3400B
FC805
Silicon Schottky Barrier Diode
30V, 500mA Rectifier
Features
· Low forward voltage (VF max=0.55V) . · Fast reverse re.
FC806 - 50V/ 100mA Rectifier
(Sanyo Semicon Device)
Ordering number :EN3401A
FC806
Silicon Schottky Barrier Diode
50V, 100mA Rectifier
Features
· Low forward voltage (VF max=0.55V) . · Fast reverse re.
FC807 - High-Speed Switching Composite Diode Anode Common
(Sanyo Semicon Device)
Ordering number:EN4337A
FC807
Silicon Epitaxial Planar Type
High-Speed Switching Composite Diode (Anode Common)
Features
· Composite type with 4diod.