FC8V33030L - Dual N-channel MOSFET
(Panasonic)
FC8V33030L
Dual N-channel MOSFET
For DC-DC Converter
FC8V33030L
Unit: mm
Features y Low drain-source ON resistance:RDS(on)typ. = 22 mΩ (VGS = 4.5 .
FC8V22080L - Gate resistor installed Dual N-channel MOS FET
(Panasonic)
DReovcisNioon. . T3 T4-EA-14491
FC8V22080L
Gate resistor installed Dual N-channel MOS FET
For lithium-ion secondary battery protection circuits
Fea.
FC801 - Composite Diode for High-Speed Switching Applications
(Sanyo Semicon Device)
Ordering number :EN3107A
FC801
Silicon Epitaxal Planar Diode
Composite Diode for High-Speed Switching Applications
Features
· Composite type with 4 .
FC802 - Composite Diode for High-Speed Switching Applications
(Sanyo Semicon Device)
Ordering number :EN3108B
FC802
Silicon Epitaxal Planar Diode
Composite Diode for High-Speed Switching Applications
Features
· Composite type with 4 .
FC803 - 30V/ 70mA Rectifier
(Sanyo Semicon Device)
Ordering number :EN3193A
FC803
Silicon Schottky Barrier Diode
30V, 70mA Rectifier
Features
· Low forward voltage (VF max=0.55V) . · Fast reverse rec.
FC804 - 30V/ 200mA Rectifier
(Sanyo Semicon Device)
Ordering number :EN3194A
FC804
Silicon Schottky Barrier Diode
30V, 200mA Rectifier
Features
· Low forward voltage (VF max=0.55V) . · Fast reverse re.
FC805 - 30V/ 500mA Rectifier
(Sanyo Semicon Device)
Ordering number :EN3400B
FC805
Silicon Schottky Barrier Diode
30V, 500mA Rectifier
Features
· Low forward voltage (VF max=0.55V) . · Fast reverse re.
FC806 - 50V/ 100mA Rectifier
(Sanyo Semicon Device)
Ordering number :EN3401A
FC806
Silicon Schottky Barrier Diode
50V, 100mA Rectifier
Features
· Low forward voltage (VF max=0.55V) . · Fast reverse re.