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Switching Diodes
MA2B190
Silicon epitaxial planar type
φ 0.56 max.
Unit : mm
For switching circuits
1
I Features
• Low forward dynamic resistance rf • Small terminal capacitance, Ct
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Symbol VR VRRM IF(AV) IFRM IFSM Tj Tstg Rating 35 35 100 225 500 200 −55 to +200 Unit V V mA mA mA °C °C
1st Band 2nd Band
2 φ 1.95 max.