MA2C859 Datasheet (Panasonic) - Band Switching Diodes

MA2C859, Band Switching Diodes

Band Switching Diodes MA2C859 Silicon epitaxial planar type Unit : mm For band switching φ 0.45 max.

Extra-small DHD envelope, allowing to insert into a 5 mm pitch hole Less voltage dependence of the terminal capacitance Ct Low forward dynamic resistance rf Optimum for a band switching of a tuner 0.2 max.

I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Forward current (DC) Operating ambient temperature Storage temperature Symbol VR

MA2C859 Features

* COLORED BAND INDICATES CATHODE 1 Unit nA V pF Ω Ω Forward voltage (DC) Terminal capacitance Forward dynamic resistance 0.8 0.5 0.77 1.2 0.65 0.98 Note) 1 Rated input/output frequency: 100 MHz 2

* 1 : Measurement in light shielded condition

* 2 : rf measuring instrument: Nihon Koshuha MO