MA2Z784 Datasheet - Panasonic

MA2Z784 Schottky Barrier Diodes

Schottky Barrier Diodes (SBD) MA2Z784 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification K A 0.625 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak forward surge current Junction temperature Storage temperature Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 30 30 300 100 1 125 55 to +125 Unit V V mA mA A °C.

MA2Z784 Features

* 0.5 ± 0.1 0.3 1 MA2Z784 IF  V F 103 1.0 Schottky Barrier Diodes (SBD) VF  Ta 104 IR  VR 102 75°C 25°C Forward current IF (mA) 0.8 103 Forward voltage VF (V) Reverse current IR (µA) Ta = 125°C 102 75°C 10 25°C 1 10 Ta = 125°C

* 20°C 0.6 1 0.4 IF = 100 mA 10

* 1

MA2Z784_PanasonicSemiconductor.pdf