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MA2Z785 - Schottky Barrier Diodes

Features

  • 0.3 0.4 ± 0.1 1.7 ± 0.1 2.5 ± 0.2 0.4 ± 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak forward surge current.
  • Junction temperature Storage temperature Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 50 50 300 100 1 125.
  • 55 to +125 Unit V V mA mA A °C °C 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 2E Note).
  • : The peak-to-peak value in.

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Datasheet Details

Part number MA2Z785
Manufacturer Panasonic
File Size 44.75 KB
Description Schottky Barrier Diodes
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Schottky Barrier Diodes (SBD) MA2Z785 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification 0.5 ± 0.1 K A 0.625 • S-mini type 2-pin package, allowing high-density mounting • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • Low VF (forward rise voltage), with high rectification efficiency • Reverse voltage VR (DC value) = 50 V guaranteed 2 0.16 − 0.06 + 0.1 1 1.25 ± 0.1 I Features 0.3 0.4 ± 0.1 1.7 ± 0.1 2.5 ± 0.2 0.4 ± 0.
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