MA2Z785 Datasheet (Panasonic) - Schottky Barrier Diodes

MA2Z785, Schottky Barrier Diodes

Schottky Barrier Diodes (SBD) MA2Z785 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification 0.5 ± 0.1 K A 0.625 S-mini type 2-pin package, allowing high-density mounting Allowing to rectify under (IF(AV) = 100 mA) condition Optimum for high-frequency rectification because of its short reverse recovery time (trr) Low VF (forward rise voltage), with high rectification efficiency Reverse

MA2Z785 Features

* 0.3 0.4 ± 0.1 1.7 ± 0.1 2.5 ± 0.2 0.4 ± 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak forward surge current

* Junction temperature Storage temperature Symbol VR VRRM IFM IF