0.5 ± 0.1
0.3
1
MA2Z784
IF V F
103
1.0
Schottky Barrier Diodes (SBD)
VF Ta
104
IR VR
102
75°C 25°C
Forward current IF (mA)
0.8
103
Forward voltage VF (V)
Reverse current IR (µA)
Ta = 125°C 102 75°C 10 25°C 1
10
Ta = 125°C.
20°C
0.6
1
0.4
IF = 100 mA
10.
1
0.2
10 mA 3 mA
10.
2
0
0.1
0.2
0.3
0.4
0.5
0.6
0.
40
10.
1
0 40 80 120 160 200
0
5
10
15
20
25
30
Forward voltage VF (V)
Ambient temperature Ta (°C)
Reverse.
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Schottky Barrier Diodes (SBD)
MA2Z784
Silicon epitaxial planar type
Unit : mm
For super-high speed switching circuit For small current rectification
K A
0.625
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 30 30 300 100 1 125 −55 to +125 Unit V V mA mA A °C °C
0.4 ± 0.1
1.7 ± 0.1 2.5 ± 0.2
0.4 ± 0.
MA2Z784 Datasheet
