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MA2Z784 - Schottky Barrier Diodes

Features

  • 0.5 ± 0.1 0.3 1 MA2Z784 IF  V F 103 1.0 Schottky Barrier Diodes (SBD) VF  Ta 104 IR  VR 102 75°C 25°C Forward current IF (mA) 0.8 103 Forward voltage VF (V) Reverse current IR (µA) Ta = 125°C 102 75°C 10 25°C 1 10 Ta = 125°C.
  • 20°C 0.6 1 0.4 IF = 100 mA 10.
  • 1 0.2 10 mA 3 mA 10.
  • 2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.
  • 40 10.
  • 1 0 40 80 120 160 200 0 5 10 15 20 25 30 Forward voltage VF (V) Ambient temperature Ta (°C) Reverse.

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Datasheet Details

Part number MA2Z784
Manufacturer Panasonic
File Size 44.53 KB
Description Schottky Barrier Diodes
Datasheet download datasheet MA2Z784 Datasheet
Additional preview pages of the MA2Z784 datasheet.

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Full PDF Text Transcription

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Schottky Barrier Diodes (SBD) MA2Z784 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification K A 0.625 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 30 30 300 100 1 125 −55 to +125 Unit V V mA mA A °C °C 0.4 ± 0.1 1.7 ± 0.1 2.5 ± 0.2 0.4 ± 0.
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