Datasheet Summary
Band Switching Diodes
Silicon epitaxial planar type
Unit : mm
For band switching I Features
- Low forward dynamic resistance rf
- Less voltage dependence of diode capacitance CD
- S-mini type package, allowing downsizing of equipment and automatic insertion through the taping package
INDICATES CATHODE
0.4 ± 0.15
0.4 ± 0.15
1.7 ± 0.1 2.5 ± 0.2
Parameter Reverse voltage (DC) Forward current (DC) Operating ambient temperature- Storage temperature
Symbol VR IF Topr Tstg
Rating 35 100
- 25 to +85
- 55 to +150
Unit V mA °C °C
0.9 ± 0.1
0 to 0.05
1 : Anode 2 :Cathode S-Mini Type Package (2-pin)
Note)
- : Maximum ambient temperature during operation
Marking Symbol:...