Click to expand full text
Band Switching Diodes
MA2Z077
Silicon epitaxial planar type
Unit : mm
For band switching I Features
• Low forward dynamic resistance rf • Less voltage dependence of diode capacitance CD • S-mini type package, allowing downsizing of equipment and automatic insertion through the taping package
INDICATES CATHODE
0.4 ± 0.15
1
2
0.4 ± 0.15
1.7 ± 0.1 2.5 ± 0.2
Parameter Reverse voltage (DC) Forward current (DC) Operating ambient temperature* Storage temperature
Symbol VR IF Topr Tstg
Rating 35 100 −25 to +85 −55 to +150
Unit V mA °C °C
0.9 ± 0.1
0 to 0.
MA2Z077 Datasheet
