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Band Switching Diodes
MA2Z081
Silicon epitaxial planar type
Unit : mm
For band switching I Features
• S-mini type package, allowing downsizing of equipment and automatic insertion through the taping package • Small diode capacitance CD • Low forward dynamic resistance rf • Optimum for a band switching of a tuner
INDICATES CATHODE
0.4 ± 0.15
1
2
0.4 ± 0.15
1.7 ± 0.1 2.5 ± 0.2
Reverse voltage (DC) Forward current (DC) Operating ambient temperature*
VR IF Topr Tstg
35 100 −25 to +85 −55 to +150
V mA °C °C
0 to 0.05
Parameter
Symbol
Rating
Unit
0.9 ± 0.