0.3
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Peak reverse voltage Average forward current Non-repetitive peak forward surge current.
Junction temperature Storage temperature Symbol VR VRM IF(AV) IFSM Tj Tstg Rating 40 40 500 2 125.
55 to + 150 Unit V V mA A °C °C
0.4 ± 0.1
1.7 ± 0.1 2.5 ± 0.2
0.4 ± 0.1
1 : Anode 2 : Cathode S-Mini Type Package (2-pin)
Marking Symbol: 2L
Note).
: The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repeti.
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Schottky Barrier Diodes (SBD)
MA2Z720
Silicon epitaxial planar type
Unit : mm
For high-frequency rectification
0.625
• Sealed in S-mini type 2-pin package • Allowing to rectify under (IF(AV) = 500 mA) condition • Allowing high-density mounting
2
0.16 − 0.06
+ 0.1
1
1.25 ± 0.1
0.5 ± 0.1
I Features
0.3
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRM IF(AV) IFSM Tj Tstg Rating 40 40 500 2 125 −55 to + 150 Unit V V mA A °C °C
0.4 ± 0.1
1.7 ± 0.1 2.5 ± 0.2
0.4 ± 0.