0.3
1
MA2Z748
IF V F
103 104 Ta = 125°C 102 Ta = 125°C 103
Schottky Barrier Diodes (SBD)
IR V R
0.8 0.7
VF Ta
Forward current IF (mA)
Reverse current IR (µA)
Forward voltage VF (V)
75°C 25°C.
20°C
0.6 0.5 0.4 0.3 0.2 50 mA 0.1 5 mA IF = 500 mA
75°C 102
10
1
10
25°C
10.
1
1
10.
2
0
0.1
0.2
0.3
0.4
0.5
0.6
10.
1
0
5
10
15
20
25
30
0.
40
0
40
80
120
160
200
Forward voltage VF (V)
Reverse voltage VR (V)
Ambient te.
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Schottky Barrier Diodes (SBD)
MA2Z748
Silicon epitaxial planar type
Unit : mm
For super-high speed switching circuit For small current rectification
0.5 ± 0.1
K
A
0.625
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 20 20 300 3 125 −55 to +125 Unit V V mA A °C °C
0.4 ± 0.1
1.7 ± 0.1 2.5 ± 0.2
0.4 ± 0.
MA2Z748 Datasheet
