MA2ZV01 Datasheet - Panasonic

MA2ZV01 Schottky Barrier Diodes

Variable Capacitance Diodes MA2ZV01 Silicon epitaxial planar type Unit : mm For VCO INDICATES CATHODE 0.4 ± 0.15 Good linearity and large capacitance-ratio in CD  VR relation Small series resistance rD S-mini type package, allowing downsizing of equipment and automatic insertion through the taping package 1 2 0.4 ± 0.15 1.7 ± 0.1 2.5 ± 0.2 Parameter Reverse voltage (DC) Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 150 55 to.

MA2ZV01 Features

* 1 MA2ZV01 IF  V F 120 25°C Variable Capacitance Diodes CD  VR 100 f = 1 MHz Ta = 25°C 100 VR = 6 V IR  Ta 100 50 Diode capacitance CD (pF) Forward current IF (mA) 80 Ta = 60°C

* 40°C 30 20 60 10 Reverse current IR (nA) 0 4 8 12 16 20 24 28 32 36 40 10 1 40 5 3 2 0.1 2

MA2ZV01_PanasonicSemiconductor.pdf