* 1 MA3Z080D, MA3Z080E IF V F 1 000 Ta = 25°C 10 Band Switching Diodes CD VR f = 1 MHz Ta = 25°C IR T a 100 VR = 33 V 5 3 2 10 1 Reverse current IR (nA) 0 4 8 12 16 20 24 28 32 36 40 100 Diode capacitance CD (pF) Forward current IF (mA) 10 1 0.5 0.3 0.2 1 0.1 0.1 0.1 0 0.2 0
MA3Z080E
Panasonic
40.93 KB
Silicon epitaxial planar type.
Band Switching Diodes
MA3Z080D, MA3Z080E
Silicon epitaxial planar type
Unit : mm
For band switching
2.1 ± 0.1 0.425 1.25 ± 0.1 0.425
+ 0.1
.
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