* 1 MA3Z551 IF V F 25°C PIN Diodes CD VR f = 1 MHz Ta = 25°C 120 10 IR Ta 1 000 VR = 40 V 100 5 Diode capacitance CD (pF) Forward current IF (mA) 100 80 Ta = 60°C 3 2 Reverse current IR (nA) 0 4 8 12 16 20 24 28 32 36 40 10 60 1 1 40 0.5 0.3 0.2 20
* 40°C 0 0 0.2 0.
MA3Z551
Panasonic
39.95 KB
Silicon epitaxial planar type.
PIN Diodes
MA3Z551
Silicon epitaxial planar type
Unit : mm
For high-frequency variable resistor attenuator
2.1 ± 0.1 0.425 1.25 ± 0.1 0.425
📁 Related Datasheet
MA3Z070 Silicon epitaxial planar type (Panasonic)
MA3Z080D Silicon epitaxial planar type (Panasonic)
MA3Z080E Silicon epitaxial planar type (Panasonic)
MA3Z792 Silicon epitaxial planar type (Panasonic)
MA3Z792 Schottky Barrier Diodes (SBD) (Panasonic)
MA3Z792D Silicon epitaxial planar type (Panasonic)
MA3Z792E Silicon epitaxial planar type (Panasonic)
MA3Z793 Silicon epitaxial planar type (Panasonic)
MA3ZD12 Silicon epitaxial planar type (Panasonic)
MA30 Silicon epitaxial planer type variable resistor (Panasonic)
