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LN78 GaAlAs Infrared Light Emitting Diode

LN78 Description

Infrared Light Emitting Diodes LN78 GaAlAs Infrared Light Emitting Diode Unit : mm For optical control cystems ø2.4 2.9±0.25 4.5±0.3 3.9±0.3 Feat.

LN78 Features

* High-power output, high-efficiency : PO = 10 mW (typ. ) High-speed modulation capability : fC = 12 MHz 12.8 min. 2.8 2.4 2-1.2±0.3 Not soldered 1.2 0.9 1.7±0.2 0.8 1.5 2-0.45±0.15 1 2.54 R1.2 2 0.45±0.15 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC)

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Datasheet Details

Part number
LN78
Manufacturer
Panasonic Semiconductor
File Size
35.31 KB
Datasheet
LN78_PanasonicSemiconductor.pdf
Description
GaAlAs Infrared Light Emitting Diode

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GaAlAs Infrared Light Emitting Diode Panasonic Semiconductor
Panasonic Semiconductor LN78-like datasheet