PE83501
Peregrine Semiconductor
218.76kb
3.5 ghz low power cmos. The PE83501 is a high-performance dynamic UltraCMOS™ prescaler with a fixed divide ratio of 2. Its operating frequency range is 400 M
TAGS
📁 Related Datasheet
PE83502 - 3.5 GHz Low Power CMOS
(Peregrine Semiconductor)
PRODUCT SPECIFICATION
PE83502
Military Operating Temperature Range
Product Description
The PE83502 is a high performance monolithic CMOS prescaler w.
PE83503 - 3.5 GHz Low Power UltraCMOS
(Peregrine Semiconductor)
.
PE8350G - N-Channel Power MOSFET
(ChipSourceTek)
N-Channel Enhancement Mode Power MOSFET
Description
The PE8350G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It c.
PE83511 - DC - 1500 MHz Low Power UltraCMOS
(Peregrine Semiconductor)
Product Specification
PE83511
Product Description
The PE83511 is a high-performance static UltraCMOS™ prescaler with a fixed divide ratio of 2. Its o.
PE83512 - DC - 1500 MHz Low Power UltraCMOS
(Peregrine Semiconductor)
Product Specification
PE83512
Product Description
The PE83512 is a high-performance static UltraCMOS™ prescaler with a fixed divide ratio of 4. Its o.
PE83513 - DC - 1500 MHz Low Power UltraCMOS
(Peregrine Semiconductor)
Product Specification
PE83513
Product Description
The PE83513 is a high-performance static UltraCMOS™ prescaler with a fixed divide ratio of 8. Its o.
PE8306H - N-Channel Enhancement Mode Power MOSFET
(ChipSourceTek)
PE8306H
N-Channel Enhancement Mode Power MOSFET
Description
The PE8306H uses advanced trench technology to provide excellent RDS(ON) and low gate cha.
PE8307HS - N-Channel Power
(ChipSourceTek)
PE8307HS
N-Channel Enhancement Mode Power MOSFET
Description
The PE8307HS uses advanced trench technology to provide excellent RDS(ON) and low gate c.
PE8310DS - N-Channel Power MOSFET
(ChipSourceTek)
PE8310DS
N-Channel Enhancement Mode Power MOSFET
Description
The PE8310DS uses advanced trench technology to provide excellent RDS(ON) and low gate c.
PE8312F - N-Channel Enhancement Mode Power MOSFET
(ChipSourceTek)
PE8312F
N-Channel Enhancement Mode Power MOSFET
Description
The PE8312F uses advanced trench technology to provide excellent RDS(ON) and low gate cha.