Datasheet4U Logo Datasheet4U.com

PE8350G - N-Channel Power MOSFET

PE8350G Description

N-Channel Enhancement Mode Power MOSFET .
The PE8350G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

PE8350G Features

* VDS = 30V, ID = 50A RDS(ON) < 6mΩ @ VGS=10V RDS(ON) < 8.2mΩ @ VGS=4.5V Schematic diagram
* High Power and current handing capability
* Lead free product is acquired

📥 Download Datasheet

Preview of PE8350G PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
PE8350G
Manufacturer
ChipSourceTek
File Size
1.04 MB
Datasheet
PE8350G-ChipSourceTek.pdf
Description
N-Channel Power MOSFET

📁 Related Datasheet

  • PE83501 - 3.5 GHz Low Power CMOS (Peregrine Semiconductor)
  • PE83502 - 3.5 GHz Low Power CMOS (Peregrine Semiconductor)
  • PE83503 - 3.5 GHz Low Power UltraCMOS (Peregrine Semiconductor)
  • PE83511 - DC - 1500 MHz Low Power UltraCMOS (Peregrine Semiconductor)
  • PE83512 - DC - 1500 MHz Low Power UltraCMOS (Peregrine Semiconductor)
  • PE83513 - DC - 1500 MHz Low Power UltraCMOS (Peregrine Semiconductor)
  • PE83336 - 3.0 GHz Integer-N PLL (Peregrine Semiconductor)
  • PE83H3K - N-Channel Enhancement Mode Power MOSFET (Semione)

📌 All Tags

N-Channel Power MOSFET ChipSourceTek
ChipSourceTek PE8350G-like datasheet

PE8350G Stock/Price