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PE8306H - N-Channel Enhancement Mode Power MOSFET

PE8306H Description

PE8306H N-Channel Enhancement Mode Power MOSFET .
The PE8306H uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

PE8306H Features

* VDS = 30V, ID = 6A RDS(ON) < 26mΩ @ VGS=10V RDS(ON) < 40mΩ @ VGS=4.5V Schematic diagram
* High Power and current handing capability
* Lead free product is acquired

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Datasheet Details

Part number
PE8306H
Manufacturer
ChipSourceTek
File Size
1.48 MB
Datasheet
PE8306H-ChipSourceTek.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET ChipSourceTek
ChipSourceTek PE8306H-like datasheet