C30921S, C30902E Datasheet - PerkinElmer Optoelectronics

C30921S, C30902E, (C309xxx) Silicon Avalanche Photodiodes

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PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diffused "reachthrough" structure.

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C30902E_PerkinElmerOptoelectronics.pdf

C30921S Datasheet Preview — This datasheet PDF includes multiple part numbers: C30921S, C30902E. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

C30921S, C30902E

Manufacturer:

PerkinElmer Optoelectronics

File Size:

232.32 KB

Description:

(C309xxx) Silicon Avalanche Photodiodes

Note:

This datasheet PDF includes multiple part numbers: C30921S, C30902E.
Please refer to the document for exact specifications by model.

Features

* High Quantum Efficiency 77% Typical at 830 nm
* C30902S and C30921S in Geiger Mode: Single-Photon Detection Probability to 50% Low Dark-Count Rate at 5% Detection Probability - Typically 15,000/second at +22°C 350/second at -25°C Count Rates to 2 x 106/second
* Hermetically

C30921S Distributors

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C30902E C309xxx Silicon Avalanche Photodiodes PerkinElmer Optoelectronics

PerkinElmer Optoelectronics C30921S-like datasheet