C30921S Datasheet - PerkinElmer Optoelectronics

(C309xxx) Silicon Avalanche Photodiodes

C30921S Features

* High Quantum Efficiency 77% Typical at 830 nm

* C30902S and C30921S in Geiger Mode: Single-Photon Detection Probability to 50% Low Dark-Count Rate at 5% Detection Probability - Typically 15,000/second at +22°C 350/second at -25°C Count Rates to 2 x 106/second

* Hermetically

C30921S General Description

PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diffused "reachthrough" structure. This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths. Because the fall time charact.

C30921S Datasheet (232.32 KB)

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Part number:

C30921S

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PerkinElmer Optoelectronics

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232.32 KB

Description:

(c309xxx) silicon avalanche photodiodes.

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C30921S C309xxx Silicon Avalanche Photodiodes PerkinElmer Optoelectronics

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C30921S Features

C30921S General Description

Datasheet Details

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C30921S Distributor