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C30921S, C30902E Datasheet - PerkinElmer Optoelectronics

C30921S (C309xxx) Silicon Avalanche Photodiodes

PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diffused "reachthrough" structure. This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths. Because the fall time charact.

C30921S Features

* High Quantum Efficiency 77% Typical at 830 nm

* C30902S and C30921S in Geiger Mode: Single-Photon Detection Probability to 50% Low Dark-Count Rate at 5% Detection Probability - Typically 15,000/second at +22°C 350/second at -25°C Count Rates to 2 x 106/second

* Hermetically

C30902E_PerkinElmerOptoelectronics.pdf

This datasheet PDF includes multiple part numbers: C30921S, C30902E. Please refer to the document for exact specifications by model.
C30921S Datasheet Preview Page 2 C30921S Datasheet Preview Page 3

Datasheet Details

Part number:

C30921S, C30902E

Manufacturer:

PerkinElmer Optoelectronics

File Size:

232.32 KB

Description:

(c309xxx) silicon avalanche photodiodes.

Note:

This datasheet PDF includes multiple part numbers: C30921S, C30902E.
Please refer to the document for exact specifications by model.

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TAGS

C30921S C30902E C309xxx Silicon Avalanche Photodiodes PerkinElmer Optoelectronics

C30921S Distributor