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C30921E - (C309xxx) Silicon Avalanche Photodiodes

This page provides the datasheet information for the C30921E, a member of the C30902E (C309xxx) Silicon Avalanche Photodiodes family.

Datasheet Summary

Description

PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diffused "reachthrough" structure.

This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths.

Features

  • High Quantum Efficiency 77% Typical at 830 nm.
  • C30902S and C30921S in Geiger Mode: Single-Photon Detection Probability to 50% Low Dark-Count Rate at 5% Detection Probability - Typically 15,000/second at +22°C 350/second at -25°C Count Rates to 2 x 106/second.
  • Hermetically Sealed Package.
  • Low Noise at Room Temperature C30902E, C30921E - 2.3 x 10-13 A/Hz1/2 C30902S, C30921S - 1.1 x 10-13 A/Hz1/2.
  • High Responsivity - Internal Avalanche Gains in Excess o.

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Datasheet preview – C30921E

Datasheet Details

Part number C30921E
Manufacturer PerkinElmer Optoelectronics
File Size 232.32 KB
Description (C309xxx) Silicon Avalanche Photodiodes
Datasheet download datasheet C30921E Datasheet
Additional preview pages of the C30921E datasheet.

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Full PDF Text Transcription

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Description PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diffused "reachthrough" structure. This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths. Because the fall time characteristics have no "tail”, the responsivity of the device is independent of modulation frequency up to about 800 MHz. The detector chip is hermetically-sealed behind a flat glass window in a modified TO18 package. The useful diameter of the photosensitive surface is 0.5 mm.
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