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C30921SH Datasheet Silicon Avalanche Photodiodes

Manufacturer: PerkinElmer Optoelectronics

Download the C30921SH datasheet PDF. This datasheet also includes the C30902 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (C30902-PerkinElmerOptoelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number C30921SH
Manufacturer PerkinElmer Optoelectronics
File Size 175.76 KB
Description Silicon Avalanche Photodiodes
Download C30921SH Download (PDF)

Overview

DATASHEET SENSOR SOLUTIONS Silicon Avalanche Photodiodes C30902 Series High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview PerkinElmer’s C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure.

This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths.

The responsivity of the device is independent of modulation frequency up to about 800 MHz.

Key Features

  • High quantum efficiency of 77% typical @ 830 nm.
  • C30902SH and C30921SH can be operated in “Geiger” mode.
  • Hermetically sealed package.
  • Low Noise at room temperature.
  • High responsivity.
  • internal avalanche gains in excess of 150.
  • Spectral response range.
  • (10% points) 400 to 1000 nm.
  • Time response.
  • typically 0.5 ns.
  • Wide operating temperature range - -40°C to +70°C.
  • RoHS-compliant.