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VTE1295 GaAlAs Infrared Emitting Diodes

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Description

GaAlAs Infrared Emitting Diodes T-1¾ (5 mm) Bullet Package * 880 nm VTE1295 PACKAGE DIMENSIONS inch (mm) .
CASE 62 T-1¾ (5 mm) BULLET CHIP SIZE: .

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Datasheet Specifications

Part number
VTE1295
Manufacturer
PerkinElmer Optoelectronics
File Size
27.96 KB
Datasheet
VTE1295_PerkinElmerOptoelectronics.pdf
Description
GaAlAs Infrared Emitting Diodes

Applications

* (UL file #S3506). ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp. Coefficient of Power Output (Typ. ): -40°

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