VTE1261 - GaAlAs Infrared Emitting Diodes

PerkinElmer Optoelectronics

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Part number	VTE1261
Manufacturer	PerkinElmer Optoelectronics
File Size	40.52 KB
Description	GaAlAs Infrared Emitting Diodes
Datasheet	VTE1261_PerkinElmerOptoelectronics.pdf

VTE1261 Product details

Description

CASE 26 T-1¾ (5 mm) CHIP SIZE: .018" x .018" This narrow beam angle 5 mm diameter plastic packaged emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher current pulse applications.ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp.Coefficient of Po

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Published: Apr 17, 2005 |