VTE1262 GaAlAs Infrared Emitting Diodes

PerkinElmer Optoelectronics

Description

GaAlAs Infrared Emitting Diodes T-1¾ (5 mm) Plastic Package * 880 nm VTE1261, 1262 PACKAGE DIMENSIONS inch (mm) .
CASE 26 T-1¾ (5 mm) CHIP SIZE: .

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Datasheet Specifications

Part number: VTE1262
Manufacturer: PerkinElmer Optoelectronics
File Size: 40.52 KB
Datasheet: VTE1262_PerkinElmerOptoelectronics.pdf
Description: GaAlAs Infrared Emitting Diodes

Applications

* ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp. Coefficient of Power Output (Typ. ): -40°C to 100°C 200 mW

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VTE1262 GaAlAs Infrared Emitting Diodes PerkinElmer Optoelectronics

PerkinElmer Optoelectronics VTE1262-like datasheet