VTE1281W-2 - GaAlAs Infrared Emitting Diodes

PerkinElmer Optoelectronics

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Datasheet Details

Part number	VTE1281W-2
Manufacturer	PerkinElmer Optoelectronics
File Size	32.90 KB
Description	GaAlAs Infrared Emitting Diodes
Datasheet	VTE1281W-2_PerkinElmerOptoelectronics.pdf

VTE1281W-2 Product details

Description

CASE 26W T-1¾ (5 mm) WIDE ANGLE CHIP SIZE: .015" x .015" This wide beam angle 5 mm diameter plastic packaged emitter contains a GaAlAs, 880 nm IRED chip.It is a cost effective design and is well suited for high current pulse applications.ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp.Coefficient of P

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Published: Apr 17, 2005 |