VTE1281-1 Datasheet - PerkinElmer Optoelectronics

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VTE1281-1 GaAlAs Infrared Emitting Diodes

GaAlAs Infrared Emitting Diodes T-1¾ (5 mm) Plastic Package * 880 nm VTE1281-1, -2 PACKAGE DIMENSIONS inch (mm) .
CASE 26 T-1¾ (5 mm) CHIP SIZE: .

VTE1281-1_PerkinElmerOptoelectronics.pdf

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Datasheet Details

Part number:

VTE1281-1

Manufacturer:

PerkinElmer Optoelectronics

File Size:

32.20 KB

Description:

GaAlAs Infrared Emitting Diodes

Applications

* ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp. Coefficient of Power Output (Typ. ): -40°C to 100°C 200 mW

VTE1281-1 Distributors

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VTE1281-1 GaAlAs Infrared Emitting Diodes PerkinElmer Optoelectronics

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