Datasheet Details
| Part number | VTE1281-1 |
|---|---|
| Manufacturer | PerkinElmer Optoelectronics |
| File Size | 32.20 KB |
| Description | GaAlAs Infrared Emitting Diodes |
| Datasheet |
 VTE1281-1_PerkinElmerOptoelectronics.pdf
|
| Part number | VTE1281-1 |
|---|---|
| Manufacturer | PerkinElmer Optoelectronics |
| File Size | 32.20 KB |
| Description | GaAlAs Infrared Emitting Diodes |
| Datasheet |
VTE1281-1_PerkinElmerOptoelectronics.pdf
|
CASE 26 T-1¾ (5 mm) CHIP SIZE: .015" x .015" This narrow beam angle 5 mm diameter plastic packaged emitter contains a medium area, single wirebonded, GaAlAs, 880 nm, high efficiency IRED chip.It is designed to be cost effective in moderate pulse drive applications.ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100
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