VTE1285 - GaAlAs Infrared Emitting Diodes

PerkinElmer Optoelectronics

VTE1285 Datasheet Preview — Preview of VTE1285 PDF

Datasheet Details

Part number	VTE1285
Manufacturer	PerkinElmer Optoelectronics
File Size	27.65 KB
Description	GaAlAs Infrared Emitting Diodes
Datasheet	VTE1285_PerkinElmerOptoelectronics.pdf

VTE1285 Product details

Description

CASE 62 T-1¾ (5 mm) BULLET CHIP SIZE: .015" x .015" This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip.The custom lens allows this cost effective device to have a very narrow half power beam emission of ±8°.ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Curr

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Other Datasheets by PerkinElmer Optoelectronics

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Published: Apr 17, 2005 |