VTE3324LA - GaAs Infrared Emitting Diodes

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PerkinElmer Optoelectronics

Datasheet Details

Part number	VTE3324LA
Manufacturer	PerkinElmer Optoelectronics
File Size	22.30 KB
Description	GaAs Infrared Emitting Diodes
Datasheet	VTE3324LA Datasheet
Additional preview pages of the VTE3324LA datasheet.

Product details

Description

CASE 50A LONG T-1 CHIP SIZE: .011" X .011" This narrow beam angle, 3 mm diameter plastic packages, GaAs, 940 nm emitter is suitable for use in optical switch applications.ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp.Coefficient of Power Output (Typ.): Maximum Reverse Voltage: -40°C to 100°C 100 mW 1

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Published: Apr 17, 2005 |