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VTE1013 GaAs Infrared Emitting Diodes

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Description

GaAs Infrared Emitting Diodes TO-46 Flat Window Package * 940 nm VTE1013 PACKAGE DIMENSIONS inch (mm) .
CASE 24A TO-46 HERMETIC (Flat Window) CHIP SIZE: .

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Datasheet Specifications

Part number
VTE1013
Manufacturer
PerkinElmer Optoelectronics
File Size
29.72 KB
Datasheet
VTE1013_PerkinElmerOptoelectronics.pdf
Description
GaAs Infrared Emitting Diodes

Applications

* ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp. Coefficient of Power Output (Typ. ): -55°C to 125°C 200 mW

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PerkinElmer Optoelectronics VTE1013-like datasheet