VTE1163 GaAlAs Infrared Emitting Diodes

PerkinElmer Optoelectronics

Description

GaAlAs Infrared Emitting Diodes TO-46 Lensed Package * 880 nm VTE1163 PACKAGE DIMENSIONS inch (mm) .
CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .

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Datasheet Specifications

Part number: VTE1163
Manufacturer: PerkinElmer Optoelectronics
File Size: 28.18 KB
Datasheet: VTE1163_PerkinElmerOptoelectronics.pdf
Description: GaAlAs Infrared Emitting Diodes

Applications

* ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp. Coefficient of Power Output (Typ. ): -55°C to 125°C 200 mW

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VTE1163 GaAlAs Infrared Emitting Diodes PerkinElmer Optoelectronics

PerkinElmer Optoelectronics VTE1163-like datasheet